HNSE-O3-2. Utilizing Muscovite to Create High Mobility Molybdenum Disulfide Transistors


Jessica Farnsworth1
Faculty Mentor: Joshua O. Island, Ph.D.1
1College of Sciences, Department of Physics and Astronomy

ABSTRACT
Molybdenum disulfide transistor devices were fabricated utilizing muscovite mica as dielectrics in order to test the hydrophilic behavior of mica. This was done by probing the device for its transconductance plot to show hysteretic patterns. Devices were fabricated using a clean van der Waals technique to stack two-dimensional materials into heterostructures. The devices showed a hysteretic trend in the transconductance curve. We compared the hysteretic behavior from mica with that of another well-known dielectric, silicon dioxide. The devices with mica dielectrics showed larger hysteresis in the gate sweeps than silicon dioxide. Devices utilizing mica as dielectrics are expected to have hysteretic behaviors due to the interfacial water on the mica surface. It is also speculated that water accumulation will continue to grow on the surface as long as the device is in ambient conditions, so the hysteresis may worsen over time. We aim to mitigate water absorption at the surface of mica and suggest future work to accomplish this goal.

Date

Nov 15 - 19 2021
Expired!

Time

All Day

Labels

HNSE: Podium Session 3
The Office of Undergraduate Research

Organizer

The Office of Undergraduate Research
Phone
702-895-4771
Email
our@unlv.edu
Website
http://unlv.edu/our

Speakers

One Reply to “HNSE-O3-2. Utilizing Muscovite to Create High Mobility Molybdenum Disulfide Transistors”

  1. Hello, everyone. Please feel free to ask any questions regarding my research in the comment section here. I will try my best to answer in a timely manner and I hope you enjoy learning about my research on muscovite (mica) minerals. Thank you for tuning in!

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